Features Internal memory type: DDR4 Refresh row cycle time: 350 ns Component for: Laptop Internal memory: 4 GB Memory form factor: 260-pin SO-DIMM Row active time: 32 ns Memory voltage: 1.2 V CAS latency: 22 ECC: No Buffered memory type: Unregistered (unbuffered) Lead plating: Gold Row cycle time: 45.75 ns Memory layout (modules x size): 1 x 4 GB
Operational conditions Operating temperature (T-T): 0 - 85 °C Storage temperature (T-T): -55 - 100 °C
Weight & dimensions Height: 30 mm Width: 69.6 mm
Logistics data Harmonized System (HS) code: 84733020
Safety warning Warnings: Keep out of the reach of children., Do not disassemble or damage the memory modules, they may contain substances hazardous to health., Disposal of electronic products should be in accordance with local regulations for the recycling of electronic equipment.