Capacity: 2 TB
Controller: Samsung
NAND Flash memory: Samsung V-NAND TLC
DRAM Cache memory: 2GB LPDDR4
Dimensions: 80 x 22 x 2.3 mm
Format: M.2 (2280)
Sequential read: 7450 MB/s
Sequential write: 6900 MB/s
Random read (QD 1, thread 1): 22,000 IOPS
Random write (QD 1, thread 1): 80,000 IOPS
Random read (QD 32, thread 16): 1,400,000 IOPS
Random write (QD 32, thread 16): 1,550,000 IOPS
Power consumption: idle 55 mW, read 5.8 W, write 5.1 W
Reliability: TBW 1200 TB, MTBF 1.5 million hours
Supported features: TRIM, Garbage Collection, S.M.A.R.T.
Security: AES 256-bit encryption, TCG/Opal V2.0, Encrypted Drive IEEE1667
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